A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiationZARDAS, G. E; YANNAKOPOULOS, P. H; SYMEONIDES, Chrys I et al.Microelectronics journal. 2008, Vol 39, Num 5, pp 737-739, issn 0959-8324, 3 p.Article

Dependence of GaAs:Si persistent photoconductivity on temperature and α-particle irradiationZARDAS, G. E; YANNAKOPOULOS, P. H; ZISKA, M et al.Microelectronics journal. 2005, Vol 36, Num 1, pp 1-4, issn 0959-8324, 4 p.Article

Temperature dependence of Si-GaAs energy gap using photoconductivity spectraZARDAS, G. E; YANNAKOPOULOS, P. H; ZISKA, M et al.Microelectronics journal. 2006, Vol 37, Num 2, pp 91-93, issn 0959-8324, 3 p.Article

Electron irradiation induced defects in undoped and Te doped gallium phosphideZARDAS, G. E; SYMEONIDES, Ch. I; EUTHYMIOU, P. C et al.Solid state communications. 2008, Vol 145, Num 7-8, pp 332-336, issn 0038-1098, 5 p.Article